BSC010NE2LSI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC010NE2LSI
Маркировка: 010NE2LI
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 25 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 38 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29 nC
Время нарастания (tr): 6.2 ns
Выходная емкость (Cd): 1800 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00105 Ohm
Тип корпуса: PG-TDSON-8
Аналог (замена) для BSC010NE2LSI
BSC010NE2LSI Datasheet (PDF)
bsc010ne2lsi.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSIData SheetRev. 2.3FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSISuperSO81 Description5867Features7685 Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resi
bsc010ne2ls.pdf
BSC010NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 64 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
bsc010n04ls.pdf
BSC010N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for sychronous rectificationRDS(on),max 1.0 mW Very low on-resistance RDS(on)ID 100 A 100% avalanche testedQoss 84 nC Superior thermal resistanceQg(0V..10V) 95 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg
bsc010n04lst.pdf
BSC010N04LSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 40 V876Features5 Optimized for sychronous rectification 175 C rated1 52 6 Very low on-resistance RDS(on) 734 8 100% avalanche tested Superior thermal resistance4 N-channel, logic level3 Qualified according to JEDEC1) for target applications 2
bsc010n04ls6.pdf
BSC010N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2
bsc010n04lsi.pdf
BSC010N04LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.05 mW Integrated monolithic Schottky-like diodeA ID 100 Very low on-resistance RDS(on)QOSS 83 nC 100% avalanche tested87 nC QG(0V..10V) N-channel, channel Qualified according to JEDEC1) for target applicationsPG-TDSO
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
