All MOSFET. BSC010NE2LSI Datasheet

 

BSC010NE2LSI Datasheet and Replacement


   Type Designator: BSC010NE2LSI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.2 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00105 Ohm
   Package: PG-TDSON-8
 

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BSC010NE2LSI Datasheet (PDF)

 ..1. Size:1788K  infineon
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BSC010NE2LSI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSIData SheetRev. 2.3FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSISuperSO81 Description5867Features7685 Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resi

 3.1. Size:755K  infineon
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BSC010NE2LSI

BSC010NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 64 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

 7.1. Size:573K  infineon
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BSC010NE2LSI

BSC010N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for sychronous rectificationRDS(on),max 1.0 mW Very low on-resistance RDS(on)ID 100 A 100% avalanche testedQoss 84 nC Superior thermal resistanceQg(0V..10V) 95 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg

 7.2. Size:1279K  infineon
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BSC010NE2LSI

BSC010N04LSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 40 V876Features5 Optimized for sychronous rectification 175 C rated1 52 6 Very low on-resistance RDS(on) 734 8 100% avalanche tested Superior thermal resistance4 N-channel, logic level3 Qualified according to JEDEC1) for target applications 2

Datasheet: BSB104N08NP3G , BSB165N15NZ3G , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , K4145 , BSC011N03LSI , BSC014N03LS , BSC014N03MS , BSC014N04LS , BSC014N04LSI , BSC014N06NS , BSC014NE2LSI , BSC016N03LS .

History: QM3002M3 | IXFT80N10 | AP0103GP-HF | GP2M002A060XG | DAMH300N150 | IXTH6N120 | AUIRFP4004

Keywords - BSC010NE2LSI MOSFET datasheet

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