BSC010NE2LSI Datasheet. Specs and Replacement
Type Designator: BSC010NE2LSI 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.2 nS
Cossⓘ - Output Capacitance: 1800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00105 Ohm
Package: PG-TDSON-8
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BSC010NE2LSI substitution
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BSC010NE2LSI datasheet
bsc010ne2lsi.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSC010NE2LSI Data Sheet Rev. 2.3 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 25 V BSC010NE2LSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resi... See More ⇒
bsc010n04ls.pdf
BSC010N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for sychronous rectification RDS(on),max 1.0 mW Very low on-resistance R DS(on) ID 100 A 100% avalanche tested Qoss 84 nC Superior thermal resistance Qg(0V..10V) 95 nC N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg... See More ⇒
bsc010n04lst.pdf
BSC010N04LST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 40 V 8 7 6 Features 5 Optimized for sychronous rectification 175 C rated 1 5 2 6 Very low on-resistance R DS(on) 7 3 4 8 100% avalanche tested Superior thermal resistance 4 N-channel, logic level 3 Qualified according to JEDEC1) for target applications 2 ... See More ⇒
Detailed specifications: BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5, BSC009NE2LS5I, BSC010N04LS, BSC010N04LSI, 2N7002, BSC011N03LSI, BSC014N03LS, BSC014N03MS, BSC014N04LS, BSC014N04LSI, BSC014N06NS, BSC014NE2LSI, BSC016N03LS
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