BSC0901NSI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC0901NSI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.2 nS
Cossⓘ - Capacitancia de salida: 1000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: PG-TDSON-8
Búsqueda de reemplazo de BSC0901NSI MOSFET
- Selecciónⓘ de transistores por parámetros
BSC0901NSI datasheet
bsc0901nsi.pdf
BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE
bsc0901ns bsc0901ns .pdf
n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS
bsc0902ns.pdf
BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8
bsc090n03lsg.pdf
BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
Otros transistores... BSC061N08NS5 , BSC066N06NS , BSC070N10NS5 , BSC072N03LD , BSC072N08NS5 , BSC079N03SG , BSC080N03LS , BSC080N03MS , IRFB7545 , BSC0902NSI , BSC0904NSI , BSC0910NDI , BSC0911ND , BSC0921NDI , BSC0923NDI , BSC0924NDI , BSC0925ND .
History: SWD6N80DE | SWD2N60DC
History: SWD6N80DE | SWD2N60DC
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2n3903 transistor | 2n4360 | 2n2613 | c2166 transistor | 2sd330 | 20n60 | ksa1013 | mje15032g datasheet
