BSC0901NSI PDF and Equivalents Search

 

BSC0901NSI Specs and Replacement

Type Designator: BSC0901NSI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: PG-TDSON-8

BSC0901NSI substitution

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BSC0901NSI datasheet

 ..1. Size:580K  infineon
bsc0901nsi.pdf pdf_icon

BSC0901NSI

BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE... See More ⇒

 5.1. Size:1609K  infineon
bsc0901ns bsc0901ns .pdf pdf_icon

BSC0901NSI

n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS ... See More ⇒

 8.1. Size:816K  infineon
bsc0902ns.pdf pdf_icon

BSC0901NSI

BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8 ... See More ⇒

 8.2. Size:521K  infineon
bsc090n03lsg.pdf pdf_icon

BSC0901NSI

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒

Detailed specifications: BSC061N08NS5, BSC066N06NS, BSC070N10NS5, BSC072N03LD, BSC072N08NS5, BSC079N03SG, BSC080N03LS, BSC080N03MS, IRFB7545, BSC0902NSI, BSC0904NSI, BSC0910NDI, BSC0911ND, BSC0921NDI, BSC0923NDI, BSC0924NDI, BSC0925ND

Keywords - BSC0901NSI MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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