BSH205G2 Todos los transistores

 

BSH205G2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSH205G2

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: SOT-23 SOT-346

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BSH205G2 datasheet

 ..1. Size:276K  nxp
bsh205g2.pdf pdf_icon

BSH205G2

BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power di

 8.1. Size:112K  philips
bsh205 3.pdf pdf_icon

BSH205G2

Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 A g Subminiature surface mount package RDS(ON) 0.5 (VGS = -2.5 V) VGS(TO) 0.4 V d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhan

 9.1. Size:110K  philips
bsh202 3.pdf pdf_icon

BSH205G2

Philips Semiconductors Product specification P-channel enhancement mode BSH202 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.52 A g Subminiature surface mount package RDS(ON) 0.9 (VGS = -10 V) d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPT

 9.2. Size:118K  philips
bsh201 3.pdf pdf_icon

BSH205G2

Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Low threshold voltage VDS = -60 V Fast switching Logic level compatible ID = -0.3 A g Subminiature surface mount package RDS(ON) 2.5 (VGS = -10 V) d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTI

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