BSH205G2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: BSH205G2
   Marking Code: *KB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.7 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: SOT-23 SOT-346

BSH205G2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BSH205G2 Datasheet (PDF)

..1. Size:276K nxp
bsh205g2.pdf

BSH205G220 V, P-channel Trench MOSFET29 April 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power di

8.1. Size:112K philips
bsh205 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan

9.1. Size:110K philips
bsh202 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH202 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.52 Ag Subminiature surface mountpackage RDS(ON) 0.9 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPT

9.2. Size:118K philips
bsh201 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -60 V Fast switching Logic level compatible ID = -0.3 Ag Subminiature surface mountpackage RDS(ON) 2.5 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPTI

9.3. Size:116K philips
bsh203 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH203 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.47 Ag Subminiature surface mountpackage RDS(ON) 1.1 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan

9.4. Size:117K philips
bsh207 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH207 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -1.52 Ag Subminiature surface mountpackage RDS(ON) 0.15 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT457P-channel, enh

9.5. Size:112K philips
bsh206 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT363P-channel, enha

9.6. Size:233K nxp
bsh201.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

9.7. Size:225K nxp
bsh202.pdf