BSL214N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSL214NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7

BSL215P#

Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101

BSL215COptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 140 mW Super Logic level (2.5V rated)VGS=2.5 V 280 250 Avalanche ratedID -1.5 1.5 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-TSOP6 Halogen free a

SMD Type MOSFETTransistorsP-Channel Enhancement Mode MOSFETBSL211DV(KSL211DV) Features( )SOT-23-6 Unit: mm+0.1 Super Logic Level (2.5 V rated) 0.4-0.1 150C operating temperature6 5 4 Avalanche rated dv/dt rated 2 31+0.02DD 0.15 -0.02+0.01-0.01+0.2-0.1GGSS1 Drain 4 Source2 Drain 5 Drain3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 ,u