All MOSFET. BSL214N Datasheet

 

BSL214N Datasheet and Replacement


   Type Designator: BSL214N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT-457
 

 BSL214N substitution

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BSL214N Datasheet (PDF)

 ..1. Size:413K  infineon
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BSL214N

BSL214NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7

 9.1. Size:419K  infineon
bsl215p.pdf pdf_icon

BSL214N

BSL215P#

 9.2. Size:348K  infineon
bsl211sp.pdf pdf_icon

BSL214N

Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101

 9.3. Size:405K  infineon
bsl215c.pdf pdf_icon

BSL214N

BSL215COptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 140 mW Super Logic level (2.5V rated)VGS=2.5 V 280 250 Avalanche ratedID -1.5 1.5 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-TSOP6 Halogen free a

Datasheet: BSG0811ND , BSG0813NDI , BSH111BK , BSH112 , BSH205G2 , BSL202SN , BSL205N , BSL207N , STP75NF75 , BSL215C , BSL302SN , BSL303SPE , BSL305SPE , BSL306N , BSL308C , BSL316C , BSL606SN .

History: P9B40HP2 | FS25SM-10A | TF3407 | UTT6NP10G-S08-R | SIA537EDJ | DN3535 | QM2N7002E3K1

Keywords - BSL214N MOSFET datasheet

 BSL214N cross reference
 BSL214N equivalent finder
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 BSL214N replacement

 

 
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