BSS119L6327 Todos los transistores

 

BSS119L6327 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS119L6327

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.1 nS

Cossⓘ - Capacitancia de salida: 8.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: SOT-23 SOT-346

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BSS119L6327 datasheet

 ..1. Size:87K  infineon
bss119l6327.pdf pdf_icon

BSS119L6327

Rev. 1.5 BSS119 SIPMOS Small-Signal-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 6 Enhancement mode ID 0.17 A Logic Level PG-SOT23 dv/dt rated 3 Drain pin 3 Gate Qualified according to AEC Q101 pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking BSS119 L6433 10000 pcs/reel sSH PG-SOT23 Yes

 8.1. Size:90K  infineon
bss119.pdf pdf_icon

BSS119L6327

BSS 119 SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.6 ...2.6 V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6 SOT-23 sSH Type Ordering Code Tape and Reel Information BSS 119 Q67000-S007 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS =

 8.2. Size:619K  infineon
bss119n.pdf pdf_icon

BSS119L6327

BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS 100 V N-channel RDS(on),max VGS=10 V 6 W Enhancement mode VGS=4.5 V 10 Logic level (4.5V rated) ID 0.19 A Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant; Halogen free 3 1 2 Type Package Tape and Reel Information Marking Halogen fre

 9.1. Size:76K  philips
bss110 1.pdf pdf_icon

BSS119L6327

DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSS110 vertical D-MOS transistor FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. Hi

Otros transistores... BSP372 , BSP372N , BSP373 , BSP373N , BSP716N , BSP88 , BSP89L6327 , BSR606N , 8N60 , BSS119N , BSS123D87Z , BSS123-7 , BSS123-7-F , BSS123L6327 , BSS123L6433 , BSS123N , BSS123TA .

 

 

 


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