All MOSFET. BSS119L6327 Datasheet

 

BSS119L6327 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSS119L6327
   Marking Code: sSH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 0.17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.67 nC
   trⓘ - Rise Time: 3.1 nS
   Cossⓘ - Output Capacitance: 8.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT-23 SOT-346

 BSS119L6327 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSS119L6327 Datasheet (PDF)

 ..1. Size:87K  infineon
 bss119l6327.pdf

BSS119L6327 BSS119L6327

Rev. 1.5BSS119SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 6 Enhancement modeID 0.17 A Logic LevelPG-SOT23 dv/dt rated3Drainpin 3Gate Qualified according to AEC Q101pin12Sourcepin 21VPS05161Type Package Pb-free Tape and Reel Information MarkingBSS119 L6433: 10000 pcs/reel sSHPG-SOT23 Yes

 8.1. Size:90K  infineon
 bss119.pdf

BSS119L6327 BSS119L6327

BSS 119SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.6 ...2.6 VPin 1 Pin 2 Pin 3G S DType VDS ID RDS(on) Package MarkingBSS 119 100 V 0.17 A 6 SOT-23 sSHType Ordering Code Tape and Reel InformationBSS 119 Q67000-S007 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 100 VVDrain-gate voltageDGRRGS =

 8.2. Size:619K  infineon
 bss119n.pdf

BSS119L6327 BSS119L6327

BSS119NOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max VGS=10 V 6 W Enhancement modeVGS=4.5 V 10 Logic level (4.5V rated)ID 0.19 A Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant; Halogen free3 1 2 Type Package Tape and Reel Information Marking Halogen fre

 9.1. Size:76K  philips
 bss110 1.pdf

BSS119L6327 BSS119L6327

DISCRETE SEMICONDUCTORSDATA SHEETBSS110P-channel enhancement modevertical D-MOS transistor1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSS110vertical D-MOS transistorFEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. Hi

 9.2. Size:76K  philips
 bss110.pdf

BSS119L6327 BSS119L6327

DISCRETE SEMICONDUCTORSDATA SHEETBSS110P-channel enhancement modevertical D-MOS transistor1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSS110vertical D-MOS transistorFEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. Hi

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