17N60 Todos los transistores

 ..1. Size:211K  inchange semiconductor
 17n60.pdf

isc N-Channel MOSFET Transistor 17N60 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 0.1. Size:227K  1
 ssf17n60a.pdf

 0.2. Size:486K  international rectifier
 irfb17n60k.pdf

PD - 95629 IRFB17N60KPbF Lead-Free 8/4/04 Document Number 91099 www.vishay.com 1 IRFB17N60KPbF Document Number 91099 www.vishay.com 2 IRFB17N60KPbF Document Number 91099 www.vishay.com 3 IRFB17N60KPbF Document Number 91099 www.vishay.com 4 IRFB17N60KPbF Document Number 91099 www.vishay.com 5 IRFB17N60KPbF Document Number 91099 www.vishay.com 6 IRFB17N60KPbF

 0.3. Size:761K  fairchild semi
 fdp17n60n fdpf17n60nt.pdf

July 2009 UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34 Features Description RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 48nC) stripe, DMOS technology. Low Crss ( Typ. 23pF) This advanced technology has b

 0.4. Size:944K  samsung
 ssh17n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.356 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 0.5. Size:219K  vishay
 sihp17n60d.pdf

SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS

 0.6. Size:187K  vishay
 sihg17n60d.pdf

SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS

 0.7. Size:1018K  vishay
 irfb17n60k irfb17n60kpbf.pdf

IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Smaller TO-220 Package VDS (V) 600 Available Low Gate Charge Qg Results in Simple Drive RDS(on) ( )VGS = 10 V 0.35 RoHS* Requirement Qg (Max.) (nC) 99 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 32 Ruggedness Qgd (nC) 47 Fully Characterized Capacitance and Avalanc

 0.8. Size:525K  fuji
 fmh17n60es.pdf

FMH17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

 0.9. Size:517K  fuji
 fmr17n60es.pdf

FMR17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)

 0.10. Size:514K  fuji
 fmv17n60es.pdf

FMV17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

 0.11. Size:159K  solitron
 sdf17n60.pdf