isc N-Channel MOSFET Transistor 17N60FEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

PD - 95629IRFB17N60KPbF Lead-Free8/4/04Document Number: 91099 www.vishay.com1IRFB17N60KPbFDocument Number: 91099 www.vishay.com2IRFB17N60KPbFDocument Number: 91099 www.vishay.com3IRFB17N60KPbFDocument Number: 91099 www.vishay.com4IRFB17N60KPbFDocument Number: 91099 www.vishay.com5IRFB17N60KPbFDocument Number: 91099 www.vishay.com6IRFB17N60KPbF

July 2009UniFETTMFDP17N60N / FDPF17N60NTN-Channel MOSFET 600V, 17A, 0.34Features Description RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 23pF)This advanced technology has b

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

SiHP17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS

SiHG17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS

IRFB17N60K, SiHFB17N60KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Smaller TO-220 PackageVDS (V) 600Available Low Gate Charge Qg Results in Simple DriveRDS(on) ()VGS = 10 V 0.35RoHS*RequirementQg (Max.) (nC) 99COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 32RuggednessQgd (nC) 47 Fully Characterized Capacitance and Avalanc

FMH17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

FMR17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V)

FMV17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2