45N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 45N20FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.065(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

SSH45N20AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 45 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V