All MOSFET. 45N20 Datasheet

 

45N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 45N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-3P

 45N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

45N20 Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
 45n20.pdf

45N20 45N20

isc N-Channel MOSFET Transistor 45N20FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.065(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 0.1. Size:206K  1
 ssf45n20a.pdf

45N20 45N20

 0.2. Size:912K  fairchild semi
 ssp45n20b.pdf

45N20 45N20

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

 0.3. Size:914K  fairchild semi
 ssp45n20b sss45n20b.pdf

45N20 45N20

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

 0.4. Size:211K  samsung
 ssh45n20a.pdf

45N20 45N20

SSH45N20AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 45 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

 0.5. Size:818K  samsung
 ssp45n20a.pdf

45N20 45N20

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK764 | STD12N05T4 | NTMFD5C674NLT1G | WSP4445 | FDN5618P | FDP047N10

 

 
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