45N20 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 45N20 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.065 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

SSH45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input Capacitance ID = 45 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input Capacitance ID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V