BUK456-60B MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK456-60B datasheet

5.1. Size:54K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor

5.2. Size:67K philips
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5.3. Size:57K philips
buk456-60h 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 60 A Automotive and general purpose Ptot Total power dissipation 150 W switch

5.4. Size:229K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK456-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM

Otros transistores... BUK453-60A , BUK454-200A , BUK445-60B , BUK454-200B , BUK455-60A , BUK455-60B , BUK445-60A , BUK456-60A , IRF640 , 9N90L-TF1 , BUK444-200B , BUZ14 , BUZ15 , BUZ205 , BUZ211 , BUZ330 , IRFAC32 .