BUK456-60B PDF and Equivalents Search

 

BUK456-60B Specs and Replacement

Type Designator: BUK456-60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-220AB

BUK456-60B substitution

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BUK456-60B datasheet

 5.1. Size:54K  philips
buk456-60a-b 1.pdf pdf_icon

BUK456-60B

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor... See More ⇒

 5.2. Size:67K  philips
buk456-60a-b 2.pdf pdf_icon

BUK456-60B

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor... See More ⇒

 5.3. Size:57K  philips
buk456-60h 1.pdf pdf_icon

BUK456-60B

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 60 A Automotive and general purpose Ptot Total power dissipation 150 W switch... See More ⇒

 5.4. Size:229K  inchange semiconductor
buk456-60.pdf pdf_icon

BUK456-60B

isc N-Channel MOSFET Transistor BUK456-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: BUK453-60A, BUK454-200A, BUK445-60B, BUK454-200B, BUK455-60A, BUK455-60B, BUK445-60A, BUK456-60A, IRF640, 9N90L-TF1, BUK444-200B, BUZ14, BUZ15, BUZ205, BUZ211, BUZ330, IRFAC32

Keywords - BUK456-60B MOSFET specs

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