BUK456-60B - параметры транзистора MOSFET, его аналоги, datasheet

BUK456-60B Datasheet (PDF)

5.1. Size:54K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 52 51 A(SMPS), motor

5.2. Size:67K philips
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5.3. Size:57K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 60 AAutomotive and general purpose Ptot Total power dissipation 150 Wswitch

5.4. Size:229K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK456-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMUM

Другие MOSFET... BUK453-60A , BUK454-200A , BUK445-60B , BUK454-200B , BUK455-60A , BUK455-60B , BUK445-60A , BUK456-60A , IRFP460 , 9N90L-TF1 , BUK444-200B , BUZ14 , BUZ15 , BUZ205 , BUZ211 , BUZ330 , IRFAC32 .