M7002NND03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: M7002NND03
   Código: 72
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.115 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
   Paquete / Cubierta: WBFBP-03B

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M7002NND03 Datasheet (PDF)

..1. Size:341K jiangsu
m7002nnd03.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFETS D M7002NND03 MOSFET( N-Channel ) WBFBP-03B (1.21.20.5) TOP DESCRIPTION unit: mm High cell density, DMOS technology. These products have been designed to G S minimize on-state resistance while provide rugged, reliable, and fast switching D performance. They can be used i

8.1. Size:264K sino
sm7002nsf.pdf

SM7002NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/80A,RDS(ON)=10.8m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM7002NS

8.2. Size:227K sino
sm7002nsan.pdf

SM7002NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/0.45A , RDS(ON)=2.2 (max.) @ VGS=10VS RDS(ON)=2.6 (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23N(RoHS Compliant)D ESD Protection : HBM=(+/-)1600V MM=(+/-)100VGApplications High Speed Switching.S Analog Switching Application.N-Chann

8.3. Size:826K agertech
atm7002nsa.pdf

ATM7002NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 60V Drain Current: 340mA Features Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage R

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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