M7002NND03 PDF and Equivalents Search

 

M7002NND03 Specs and Replacement

Type Designator: M7002NND03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm

Package: WBFBP-03B

M7002NND03 substitution

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M7002NND03 datasheet

 ..1. Size:341K  jiangsu
m7002nnd03.pdf pdf_icon

M7002NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFETS D M7002NND03 MOSFET( N-Channel ) WBFBP-03B (1.2 1.2 0.5) TOP DESCRIPTION unit mm High cell density, DMOS technology. These products have been designed to G S minimize on-state resistance while provide rugged, reliable, and fast switching D performance. They can be used i... See More ⇒

 8.1. Size:264K  sino
sm7002nsf.pdf pdf_icon

M7002NND03

SM7002NSF N-Channel Enhancement Mode MOSFET Features Pin Description 68V/80A, RDS(ON)=10.8m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications Synchronous Rectification. G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM7002NS ... See More ⇒

 8.2. Size:227K  sino
sm7002nsan.pdf pdf_icon

M7002NND03

SM7002NSAN N-Channel Enhancement Mode MOSFET Features Pin Description D 60V/0.45A , RDS(ON)=2.2 (max.) @ VGS=10V S RDS(ON)=2.6 (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23N (RoHS Compliant) D ESD Protection HBM=(+/-)1600V MM=(+/-)100V G Applications High Speed Switching. S Analog Switching Application. N-Chann... See More ⇒

 8.3. Size:826K  agertech
atm7002nsa.pdf pdf_icon

M7002NND03

ATM7002NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 60V Drain Current 340mA Features Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage R ... See More ⇒

Detailed specifications: BUZ330, IRFAC32, JCS24N50WH, JCS24N50ABH, RU6888R3, SPP77N06S2-12, SPB77N06S2-12, TSA20N50M, 7N65, M7002TTD03, MC3406, MC3541, MCD04N60, MCD04N65, MCD3410, MS10N60, MS10N65

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