MS18N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MS18N50 Datasheet (PDF)

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MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic

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HMS18N80,HMS18N80FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industrys ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio

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HMS18N10QN-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

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HMS18N10DN-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

Otros transistores... MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , RFP50N06 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 , MS23P25 .