MS18N50 Todos los transistores

 

MS18N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS18N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 238 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm

Encapsulados: TO-220

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MS18N50 datasheet

 ..1. Size:897K  bruckewell
ms18n50.pdf pdf_icon

MS18N50

MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic

 9.1. Size:1142K  cn hmsemi
hms18n80 hms18n80f.pdf pdf_icon

MS18N50

HMS18N80,HMS18N80F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industry s ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio

 9.2. Size:1002K  cn hmsemi
hms18n10q.pdf pdf_icon

MS18N50

HMS18N10Q N-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

 9.3. Size:1354K  cn hmsemi
hms18n10d.pdf pdf_icon

MS18N50

HMS18N10D N-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

Otros transistores... MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , AON7410 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 , MS23P25 .

History: 2SK1502 | JMSH0602AG

 

 

 

 

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