MS18N50 PDF and Equivalents Search

 

MS18N50 Specs and Replacement

Type Designator: MS18N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO-220

MS18N50 substitution

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MS18N50 datasheet

 ..1. Size:897K  bruckewell
 ms18n50.pdf pdf_icon

MS18N50

MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic... See More ⇒

 9.1. Size:1142K  cn hmsemi
 hms18n80 hms18n80f.pdf pdf_icon

MS18N50

HMS18N80,HMS18N80F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industry s ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio... See More ⇒

 9.2. Size:1002K  cn hmsemi
 hms18n10q.pdf pdf_icon

MS18N50

HMS18N10Q N-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON) ... See More ⇒

 9.3. Size:1354K  cn hmsemi
 hms18n10d.pdf pdf_icon

MS18N50

HMS18N10D N-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON) ... See More ⇒

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Detailed specifications: MS12N65, MS13N50, MS13P21, MS14N60, MS14P21, MS15N50, MS15N60, MS17N03Q8, AON7410, MS20N04NE, MS20N06, MS23N22, MS23N26, MS23N36, MS23P01, MS23P21, MS23P25

Keywords - MS18N50 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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