MS23P01 Todos los transistores

 

MS23P01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS23P01

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: SOT-23

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MS23P01 datasheet

 ..1. Size:1740K  bruckewell
ms23p01.pdf pdf_icon

MS23P01

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute

 9.1. Size:348K  bruckewell
ms23p39.pdf pdf_icon

MS23P01

MS23P39 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T

 9.2. Size:369K  bruckewell
ms23p25.pdf pdf_icon

MS23P01

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

 9.3. Size:218K  bruckewell
ms23p21.pdf pdf_icon

MS23P01

MS23P21 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

Otros transistores... MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , IRF530 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C .

History: AP3A010MT | FDB0170N607L | GP2302 | DMP4015SPSQ | SMF5N65 | 2SK1081-01 | HF20N60

 

 

 

 

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