Справочник MOSFET. MS23P01

 

MS23P01 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MS23P01
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для MS23P01

   - подбор ⓘ MOSFET транзистора по параметрам

 

MS23P01 Datasheet (PDF)

 ..1. Size:1740K  bruckewell
ms23p01.pdfpdf_icon

MS23P01

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute

 9.1. Size:348K  bruckewell
ms23p39.pdfpdf_icon

MS23P01

MS23P39P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T

 9.2. Size:369K  bruckewell
ms23p25.pdfpdf_icon

MS23P01

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

 9.3. Size:218K  bruckewell
ms23p21.pdfpdf_icon

MS23P01

MS23P21 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

Другие MOSFET... MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , AO4407 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C .

History: FCB260N65S3 | IRLML6246TRPBF | STFI40N60M2 | FCH041N65F-F085

 

 
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