MS23P01 MOSFET Datasheet: P-Ch, 20V, 2.6A. Full specification with pinout and replacement list

MS23P01 Specs and Replacement

Type Designator: MS23P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-23

MS23P01 substitution

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MS23P01 datasheet

..1. Size:1740K bruckewell
ms23p01.pdf pdf_icon

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute... See More ⇒

9.1. Size:348K bruckewell
ms23p39.pdf pdf_icon

MS23P39 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T... See More ⇒

9.2. Size:369K bruckewell
ms23p25.pdf pdf_icon

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl... See More ⇒

9.3. Size:218K bruckewell
ms23p21.pdf pdf_icon

MS23P21 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl... See More ⇒

Detailed specifications: MS15N60, MS17N03Q8, MS18N50, MS20N04NE, MS20N06, MS23N22, MS23N26, MS23N36, IRF530, MS23P21, MS23P25, MS23P39, MS34N34, MS3N80, MS40N06, MS44P15, MS4541C