MS75N075 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MS75N075
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 300 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO-220

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MS75N075 Datasheet (PDF)

..1. Size:722K bruckewell
ms75n075.pdf

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N075 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

8.1. Size:41K omnirel
oms75n06ml.pdf

OMS75N06ML OMS38L60MLPreliminary Data SheetOMS60N10ML OMS32F60ML3-PHASE BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 25 To 75 Amp Modules,3-Phase Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Zener Gate ProtectionDESCRIPTIONThese modules are ideally suited for hig

9.1. Size:722K bruckewell
ms75n75.pdf

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N75 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

9.2. Size:486K cn hmsemi
hms75n65t.pdf

HMS75N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

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