All MOSFET. MS75N075 Datasheet

 

MS75N075 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MS75N075
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-220

 MS75N075 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MS75N075 Datasheet (PDF)

 ..1. Size:722K  bruckewell
 ms75n075.pdf

MS75N075 MS75N075

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N075 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

 8.1. Size:41K  omnirel
 oms75n06ml.pdf

MS75N075 MS75N075

OMS75N06ML OMS38L60MLPreliminary Data SheetOMS60N10ML OMS32F60ML3-PHASE BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 25 To 75 Amp Modules,3-Phase Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Zener Gate ProtectionDESCRIPTIONThese modules are ideally suited for hig

 9.1. Size:722K  bruckewell
 ms75n75.pdf

MS75N075 MS75N075

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N75 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

 9.2. Size:486K  cn hmsemi
 hms75n65t.pdf

MS75N075 MS75N075

HMS75N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MTN4N60AE3

 

 
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