Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N075 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

OMS75N06ML OMS38L60MLPreliminary Data SheetOMS60N10ML OMS32F60ML3-PHASE BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 25 To 75 Amp Modules,3-Phase Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Zener Gate ProtectionDESCRIPTIONThese modules are ideally suited for hig

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N75 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

HMS75N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.