MSC22N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSC22N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: SOIC-8
Búsqueda de reemplazo de MSC22N03 MOSFET
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MSC22N03 datasheet
msc22n03.pdf
Bruckewell Technology Corp., Ltd. http //www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSC22N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu
msc2295-bt1rev0dx.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSC2295 BT1/D NPN RF Amplifier Transistors MSC2295-BT1 Surface Mount MSC2295-CT1 COLLECTOR Motorola Preferred Devices 3 3 2 2 1 1 BASE EMITTER MAXIMUM RATINGS (TA = 25 C) CASE 318D 03, STYLE 1 Rating Symbol Value Unit SC 59 Collector Base Voltage V(BR)CBO 30 Vdc Collector Emitter Voltage V(BR)CEO 20 Vdc
msc2295-bt1-d.pdf
MSC2295-BT1, MSC2295-CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 30 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc 2 1 Emitter-Base Voltage V(BR)EBO 5.0 Vdc BASE EMITTER Collector Current - Continuous
Otros transistores... MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , MSB15N60 , MSB22A04Q8 , MSB55N03N3 , 20N60 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 .
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