MSC22N03 Datasheet and Replacement
Type Designator: MSC22N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOIC-8
MSC22N03 substitution
MSC22N03 Datasheet (PDF)
msc22n03.pdf

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSC22N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu
msc2295-bt1rev0dx.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSC2295BT1/DNPN RF Amplifier TransistorsMSC2295-BT1Surface MountMSC2295-CT1COLLECTORMotorola Preferred Devices3322 11BASE EMITTERMAXIMUM RATINGS (TA = 25C)CASE 318D03, STYLE 1Rating Symbol Value UnitSC59CollectorBase Voltage V(BR)CBO 30 VdcCollectorEmitter Voltage V(BR)CEO 20 Vdc
msc2295-bt1-d.pdf

MSC2295-BT1,MSC2295-CT1Preferred Device NPN RF AmplifierTransistors Surface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 30 VdcCollector-Emitter Voltage V(BR)CEO 20 Vdc2 1Emitter-Base Voltage V(BR)EBO 5.0 VdcBASE EMITTERCollector Current - Continuous
Datasheet: MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , MSB15N60 , MSB22A04Q8 , MSB55N03N3 , 20N60 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 .
History: HM3400B
Keywords - MSC22N03 MOSFET datasheet
MSC22N03 cross reference
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History: HM3400B



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