MSC22N03
MOSFET. Datasheet pdf. Equivalent
Type Designator: MSC22N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 4
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
SOIC-8
MSC22N03
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSC22N03
Datasheet (PDF)
..1. Size:708K bruckewell
msc22n03.pdf
Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSC22N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu
9.1. Size:112K motorola
msc2295-bt1rev0dx.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSC2295BT1/DNPN RF Amplifier TransistorsMSC2295-BT1Surface MountMSC2295-CT1COLLECTORMotorola Preferred Devices3322 11BASE EMITTERMAXIMUM RATINGS (TA = 25C)CASE 318D03, STYLE 1Rating Symbol Value UnitSC59CollectorBase Voltage V(BR)CBO 30 VdcCollectorEmitter Voltage V(BR)CEO 20 Vdc
9.2. Size:41K onsemi
msc2295-bt1-d.pdf
MSC2295-BT1,MSC2295-CT1Preferred Device NPN RF AmplifierTransistors Surface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 30 VdcCollector-Emitter Voltage V(BR)CEO 20 Vdc2 1Emitter-Base Voltage V(BR)EBO 5.0 VdcBASE EMITTERCollector Current - Continuous
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