MTC5806V8 Todos los transistores

 ..1. Size:469K  cystek
 mtc5806v8.pdf

Spec. No. C407V8 Issued Date 2014.11.10 CYStech Electronics Corp. Revised Date age No. 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC5806V8 BVDSS 60V -60V ID@VGS=10V(-10V), TA=25 C 4.3A -3.3A ID@VGS=10V(-10V), TC=25 C 6.4A -4.6A RDSON@VGS=10V(-10V) typ. 37m 70m RDSON@VGS=4.5V(-4.5V) typ. 42m 93m Features Simple drive require

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 mtc5806q8.pdf

Spec. No. C407Q8 Issued Date 2008.12.02 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC5806Q8 BVDSS 60V -60V ID 4.5A -3.5A RDSON(typ.) @VGS=(-)10V 37m 70m RDSON(typ.) @VGS=(-)4.5V 42m 93m Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in

 9.1. Size:1164K  jiejie micro
 jmtc58n06b.pdf

60V, 58A, 8.3m N-channel Power Trench MOSFET JMTC58N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 58 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.3 mW Applications Load Switch PWM Application Power Manage