MTC5806V8 - аналоги, параметры транзистора - Справочник транзисторов

MTC5806V8 даташит

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Spec. No. C407V8 Issued Date 2014.11.10 CYStech Electronics Corp. Revised Date age No. 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC5806V8 BVDSS 60V -60V ID@VGS=10V(-10V), TA=25 C 4.3A -3.3A ID@VGS=10V(-10V), TC=25 C 6.4A -4.6A RDSON@VGS=10V(-10V) typ. 37m 70m RDSON@VGS=4.5V(-4.5V) typ. 42m 93m Features Simple drive require

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Spec. No. C407Q8 Issued Date 2008.12.02 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC5806Q8 BVDSS 60V -60V ID 4.5A -3.5A RDSON(typ.) @VGS=(-)10V 37m 70m RDSON(typ.) @VGS=(-)4.5V 42m 93m Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in

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60V, 58A, 8.3m N-channel Power Trench MOSFET JMTC58N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 58 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.3 mW Applications Load Switch PWM Application Power Manage

Другие MOSFET... MSAFZ50N10A , MSB15N60 , MSB22A04Q8 , MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , IRFP460 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 , MTD2955VT4 , MTD5P06VT4 , MTD5P06VT4G , MTD6N15T4 .