MTC5806V8 Specs and Replacement
Type Designator: MTC5806V8
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.6 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: DFN3?3
MTC5806V8 substitution
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MTC5806V8 datasheet
mtc5806v8.pdf
Spec. No. C407V8 Issued Date 2014.11.10 CYStech Electronics Corp. Revised Date age No. 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC5806V8 BVDSS 60V -60V ID@VGS=10V(-10V), TA=25 C 4.3A -3.3A ID@VGS=10V(-10V), TC=25 C 6.4A -4.6A RDSON@VGS=10V(-10V) typ. 37m 70m RDSON@VGS=4.5V(-4.5V) typ. 42m 93m Features Simple drive require... See More ⇒
mtc5806q8.pdf
Spec. No. C407Q8 Issued Date 2008.12.02 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC5806Q8 BVDSS 60V -60V ID 4.5A -3.5A RDSON(typ.) @VGS=(-)10V 37m 70m RDSON(typ.) @VGS=(-)4.5V 42m 93m Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in ... See More ⇒
jmtc58n06b.pdf
60V, 58A, 8.3m N-channel Power Trench MOSFET JMTC58N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 58 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.3 mW Applications Load Switch PWM Application Power Manage... See More ⇒
Detailed specifications: MSAFZ50N10A, MSB15N60, MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, IRFP460, MTD10N10ELT4, MTD120C10J4, MTD20P03HDLT4, MTD20P06HDLT4, MTD2955VT4, MTD5P06VT4, MTD5P06VT4G, MTD6N15T4
Keywords - MTC5806V8 MOSFET specs
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