MTD2955VT4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTD2955VT4
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: DPAK
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MTD2955VT4 datasheet
mtd2955vt4.pdf
MTD2955V Power MOSFET 12 A, 60 V P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge http //onsemi.com circuits where diode speed and commutating safe operating
mtd2955v.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2955V/D Designer's Data Sheet MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.230 OHM tance area product about one half that of standar
mtd2955vrev3.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2955V/D Designer's Data Sheet MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.230 OHM tance area product about one half that of standar
mtd2955erev3.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2955E/D Designer's Data Sheet TMOS E-FET. MTD2955E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new ene
Otros transistores... MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 , IRFB4110 , MTD5P06VT4 , MTD5P06VT4G , MTD6N15T4 , MTD6N15T4G , MTD6N15T4GV , MTD6N20ET4 , MTD6N20ET4G , MTD6P10E .
History: LSGC04R029 | HM2302 | KP739V | LSGC10R080W3
History: LSGC04R029 | HM2302 | KP739V | LSGC10R080W3
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