MTD2955VT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTD2955VT4
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.23 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET MTD2955VT4
MTD2955VT4 Datasheet (PDF)
mtd2955vt4.pdf
MTD2955VPower MOSFET 12 A, 60 VP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridgehttp://onsemi.comcircuits where diode speed and commutating safe operating
mtd2955v.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD2955V/DDesigner's Data SheetMTD2955VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET PChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.230 OHMtance area product about onehalf that of standar
mtd2955vrev3.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD2955V/DDesigner's Data SheetMTD2955VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET PChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.230 OHMtance area product about onehalf that of standar
mtd2955erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2955E/DDesigner's Data SheetTMOS E-FET. MTD2955EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 12 AMPERESenergy in the avalanche and commutation modes. The new ene
mtd2955e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2955E/DDesigner's Data SheetTMOS E-FET. MTD2955EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 12 AMPERESenergy in the avalanche and commutation modes. The new ene
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