Справочник MOSFET. MTD2955VT4

 

MTD2955VT4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTD2955VT4
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для MTD2955VT4

 

 

MTD2955VT4 Datasheet (PDF)

 ..1. Size:234K  onsemi
 mtd2955vt4.pdf

MTD2955VT4 MTD2955VT4

MTD2955VPower MOSFET 12 A, 60 VP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridgehttp://onsemi.comcircuits where diode speed and commutating safe operating

 6.1. Size:153K  motorola
 mtd2955v.pdf

MTD2955VT4 MTD2955VT4

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD2955V/DDesigner's Data SheetMTD2955VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET PChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.230 OHMtance area product about onehalf that of standar

 6.2. Size:148K  motorola
 mtd2955vrev3.pdf

MTD2955VT4 MTD2955VT4

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD2955V/DDesigner's Data SheetMTD2955VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET PChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.230 OHMtance area product about onehalf that of standar

 7.1. Size:243K  motorola
 mtd2955erev3.pdf

MTD2955VT4 MTD2955VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2955E/DDesigner's Data SheetTMOS E-FET. MTD2955EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 12 AMPERESenergy in the avalanche and commutation modes. The new ene

 7.2. Size:210K  motorola
 mtd2955e.pdf

MTD2955VT4 MTD2955VT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2955E/DDesigner's Data SheetTMOS E-FET. MTD2955EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 12 AMPERESenergy in the avalanche and commutation modes. The new ene

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