MTD2955VT4 Datasheet. Specs and Replacement

Type Designator: MTD2955VT4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: DPAK

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MTD2955VT4 substitution

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MTD2955VT4 datasheet

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 mtd2955vt4.pdf pdf_icon

MTD2955VT4

MTD2955V Power MOSFET 12 A, 60 V P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge http //onsemi.com circuits where diode speed and commutating safe operating ... See More ⇒

 6.1. Size:153K  motorola
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MTD2955VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2955V/D Designer's Data Sheet MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.230 OHM tance area product about one half that of standar... See More ⇒

 6.2. Size:148K  motorola
 mtd2955vrev3.pdf pdf_icon

MTD2955VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2955V/D Designer's Data Sheet MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.230 OHM tance area product about one half that of standar... See More ⇒

 7.1. Size:243K  motorola
 mtd2955erev3.pdf pdf_icon

MTD2955VT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2955E/D Designer's Data Sheet TMOS E-FET. MTD2955E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new ene... See More ⇒

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Detailed specifications: MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8, MTD10N10ELT4, MTD120C10J4, MTD20P03HDLT4, MTD20P06HDLT4, 2N7002, MTD5P06VT4, MTD5P06VT4G, MTD6N15T4, MTD6N15T4G, MTD6N15T4GV, MTD6N20ET4, MTD6N20ET4G, MTD6P10E

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