MTD2955VT4 Datasheet and Replacement

MTD2955VPower MOSFET 12 A, 60 VP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridgehttp://onsemi.comcircuits where diode speed and commutating safe operating

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD2955V/DDesigner's Data SheetMTD2955VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET PChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.230 OHMtance area product about onehalf that of standar

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD2955V/DDesigner's Data SheetMTD2955VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET PChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.230 OHMtance area product about onehalf that of standar

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2955E/DDesigner's Data SheetTMOS E-FET. MTD2955EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 12 AMPERESenergy in the avalanche and commutation modes. The new ene

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2955E/DDesigner's Data SheetTMOS E-FET. MTD2955EMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high 12 AMPERESenergy in the avalanche and commutation modes. The new ene