MTM23123 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTM23123
   Código: BL
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.3 V
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT-346

Búsqueda de reemplazo de MOSFET MTM23123

MTM23123 Datasheet (PDF)

..1. Size:433K panasonic
mtm23123.pdf

MTM23123Silicon P-channel MOSFETFor switching Overview PackageMTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3: Drain E

8.1. Size:434K panasonic
mtm23110.pdf

MTM23110Silicon P-channel MOSFETFor switching Overview PackageMTM23110 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (1.8 V, 2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3:

9.1. Size:439K panasonic
mtm23227.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM23227Silicon N-channel MOSFETFor switching Overview PackageMTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. SMini3-G1-B Pin Name Features 1: Gate 2: Source Realization of low on-resistance, using extremely fine process (4.6 mW

9.2. Size:357K panasonic
mtm232270lbf.pdf

Doc No. TT4-EA-13115Revision. 2Product StandardsMOS FETMTM232270LBFMTM232270LBFSilicon N-channel MOS FETUnit : mm For switching2.0MTM13227 in SMini3 type package0.3 0.153 Features Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage: 2.5 V driveHalogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 c

9.3. Size:492K panasonic
mtm232230lbf.pdf

Doc No. TT4-EA-12901Revision. 3MOS FETMTM232230LBFMTM232230LBFNMOS FETUnit : mm 2.00.3 0.153 RDS(on) typ = 20 m (VGS = 4.0 V) 2.5 V (EU RoHS / UL-94

9.4. Size:431K panasonic
mtm23223.pdf

MTM23223Silicon N-channel MOSFETFor switching Overview PackageMTM23223 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name Features 1: Gate Low voltage drive (2.5 V, 4 V) 2: Source Realization of low on-resistance, using extremely fine process 3: Drain Contributes to miniaturization of sets, reduction of component count.

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