MTM23123 MOSFET Datasheet: P-Ch, 20V, 3A. Full specification with pinout and replacement list

MTM23123 Specs and Replacement

Type Designator: MTM23123

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT-346

MTM23123 substitution

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MTM23123 datasheet

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MTM23123 Silicon P-channel MOSFET For switching Overview Package MTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1 Gate Realization of low on-resistance, using extremely fine process 2 Source Contributes to miniaturization of sets, reduction of component count. 3 Drain E... See More ⇒

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MTM23110 Silicon P-channel MOSFET For switching Overview Package MTM23110 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (1.8 V, 2.5 V, 4 V) 1 Gate Realization of low on-resistance, using extremely fine process 2 Source Contributes to miniaturization of sets, reduction of component count. 3 ... See More ⇒

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JMTM2310A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 3A Load Switch R ... See More ⇒

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This product complies with the RoHS Directive (EU 2002/95/EC). MTM23227 Silicon N-channel MOSFET For switching Overview Package MTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Code converter and other switching circuits. SMini3-G1-B Pin Name Features 1 Gate 2 Source Realization of low on-resistance, using extremely fine process (4.6 mW... See More ⇒