MTN12N30FP Todos los transistores

 

MTN12N30FP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN12N30FP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46.2 nS

Cossⓘ - Capacitancia de salida: 88 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm

Encapsulados: TO-220FP

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MTN12N30FP datasheet

 ..1. Size:463K  cystek
 mtn12n30fp.pdf pdf_icon

MTN12N30FP

Spec. No. C993FP Issued Date 2014.12.15 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 300V MTN12N30FP ID@VGS=10V, TC=25 C 12A RDSON(TYP)@ VGS=10V, ID=6A 248m Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic

 8.1. Size:453K  cystek
 mtn12n60fp.pdf pdf_icon

MTN12N30FP

Spec. No. C743FP Issued Date 2011.05.09 CYStech Electronics Corp. Revised Date 2014.05.15 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.6 typ. MTN12N60FP ID 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 8.2. Size:407K  cystek
 mtn12n65fp.pdf pdf_icon

MTN12N30FP

Spec. No. C802FP Issued Date 2010.01.08 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.6 (typ.) MTN12N65FP ID 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 8.3. Size:304K  cystek
 mtn12n60e3.pdf pdf_icon

MTN12N30FP

Spec. No. C743E3 Issued Date 2009.10.08 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 660V @Tj=150 C RDS(ON) 0.65 MTN12N60E3 ID 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist

MOSTRAR MÁS

Otros transistores... MTM8N35 , MTM8N40 , MTM8N60 , MTM98140 , MTM981400BBF , MTM98240 , MTM982400BBF , MTMC8E2A , IRFP250N , MTN12N60BFP , MTN1N60L3 , MTN2300AN3 , MTN4N65F3 , MTN8N65FI , MTN9N50FP , MTP10N08 , MTP10N10 .

History: AP4409AGEH-HF

 

 

 

 

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