MTN12N30FP MOSFET Datasheet: N-Ch, 300V, 12A. Full specification with pinout and replacement list

MTN12N30FP Specs and Replacement

Type Designator: MTN12N30FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46.2 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: TO-220FP

MTN12N30FP substitution

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MTN12N30FP datasheet

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Spec. No. C993FP Issued Date 2014.12.15 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 300V MTN12N30FP ID@VGS=10V, TC=25 C 12A RDSON(TYP)@ VGS=10V, ID=6A 248m Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic... See More ⇒

8.1. Size:453K cystek
mtn12n60fp.pdf pdf_icon

Spec. No. C743FP Issued Date 2011.05.09 CYStech Electronics Corp. Revised Date 2014.05.15 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.6 typ. MTN12N60FP ID 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

8.2. Size:407K cystek
mtn12n65fp.pdf pdf_icon

Spec. No. C802FP Issued Date 2010.01.08 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.6 (typ.) MTN12N65FP ID 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

8.3. Size:304K cystek
mtn12n60e3.pdf pdf_icon

Spec. No. C743E3 Issued Date 2009.10.08 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 660V @Tj=150 C RDS(ON) 0.65 MTN12N60E3 ID 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist... See More ⇒