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MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, http //onsemi.com converters and PWM mo

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d

MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, 10 AMPERES converters