MTP10N10ELG PDF and Equivalents Search

 

MTP10N10ELG Specs and Replacement

Type Designator: MTP10N10ELG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO-220AB

MTP10N10ELG substitution

- MOSFET ⓘ Cross-Reference Search

 

MTP10N10ELG datasheet

 ..1. Size:102K  onsemi
mtp10n10el mtp10n10elg.pdf pdf_icon

MTP10N10ELG

MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, http //onsemi.com converters and PWM mo... See More ⇒

 4.1. Size:221K  motorola
mtp10n10el.pdf pdf_icon

MTP10N10ELG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy... See More ⇒

 5.1. Size:237K  motorola
mtp10n10erev0x.pdf pdf_icon

MTP10N10ELG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒

 5.2. Size:203K  motorola
mtp10n10e.pdf pdf_icon

MTP10N10ELG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒

Detailed specifications: MTN1N60L3, MTN2300AN3, MTN4N65F3, MTN8N65FI, MTN9N50FP, MTP10N08, MTP10N10, MTP10N10E, AO3401, MTP10N25, MTP10N35, MTP10N40, MTP10N40E, MTP12N08L, RFH10N45, RFH10N50, SMD15N05

Keywords - MTP10N10ELG MOSFET specs

 MTP10N10ELG cross reference

 MTP10N10ELG equivalent finder

 MTP10N10ELG pdf lookup

 MTP10N10ELG substitution

 MTP10N10ELG replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.