MTP10N10ELG - Аналоги. Основные параметры
Наименование производителя: MTP10N10ELG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 74 ns
Cossⓘ - Выходная емкость: 175 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для MTP10N10ELG
MTP10N10ELG технические параметры
mtp10n10el mtp10n10elg.pdf
MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, http //onsemi.com converters and PWM mo
mtp10n10el.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy
mtp10n10erev0x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d
mtp10n10e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d
Другие MOSFET... MTN1N60L3 , MTN2300AN3 , MTN4N65F3 , MTN8N65FI , MTN9N50FP , MTP10N08 , MTP10N10 , MTP10N10E , AO3401 , MTP10N25 , MTP10N35 , MTP10N40 , MTP10N40E , MTP12N08L , RFH10N45 , RFH10N50 , SMD15N05 .
History: F8N65
History: F8N65
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