MTP12N08L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP12N08L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 75 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 15 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 150 nS
   Conductancia de drenaje-sustrato (Cd): 100 pF
   Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
   Paquete / Cubierta: TO-220AB

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MTP12N08L Datasheet (PDF)

..1. Size:107K njs
mtp12n08l mtp12n10l.pdf

7.1. Size:222K motorola
mtp12n06ez.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

7.2. Size:194K motorola
mtp12n06ezl.pdf

8.1. Size:177K 1
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf

8.2. Size:239K motorola
mtp12n10erev1a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

8.3. Size:203K motorola
mtp12n10e.pdf

8.4. Size:177K fairchild semi
irf630-6333 irf230-233 mtp12n18-20.pdf

8.5. Size:101K njs
mtp12n18.pdf

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mtm12n10 mtp12n10e.pdf

8.7. Size:81K njs
mtp12n20.pdf

8.8. Size:568K cn vbsemi
mtp12n10l.pdf

MTP12N10Lwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

8.9. Size:294K cn vbsemi
mtp12n10e.pdf

MTP12N10Ewww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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