All MOSFET. MTP12N08L Datasheet

 

MTP12N08L Datasheet and Replacement


   Type Designator: MTP12N08L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220AB
 

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MTP12N08L Datasheet (PDF)

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MTP12N08L

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 mtp12n06ez.pdf pdf_icon

MTP12N08L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

 7.2. Size:194K  motorola
 mtp12n06ezl.pdf pdf_icon

MTP12N08L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

 8.1. Size:177K  1
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MTP12N08L

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Datasheet: MTP10N08 , MTP10N10 , MTP10N10E , MTP10N10ELG , MTP10N25 , MTP10N35 , MTP10N40 , MTP10N40E , SKD502T , RFH10N45 , RFH10N50 , SMD15N05 , SMU15N05 , MTP12N10E , MTP12N10L , MTP12N18 , MTP12N20 .

Keywords - MTP12N08L MOSFET datasheet

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