MTP12N08L Specs and Replacement
Type Designator: MTP12N08L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220AB
MTP12N08L substitution
- MOSFET ⓘ Cross-Reference Search
MTP12N08L datasheet
mtp12n06ez.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's Data Sheet MTP12N06EZL TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a g... See More ⇒
mtp12n06ezl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's Data Sheet MTP12N06EZL TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a g... See More ⇒
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf
... See More ⇒
Detailed specifications: MTP10N08, MTP10N10, MTP10N10E, MTP10N10ELG, MTP10N25, MTP10N35, MTP10N40, MTP10N40E, SKD502T, RFH10N45, RFH10N50, SMD15N05, SMU15N05, MTP12N10E, MTP12N10L, MTP12N18, MTP12N20
Keywords - MTP12N08L MOSFET specs
MTP12N08L cross reference
MTP12N08L equivalent finder
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MTP12N08L substitution
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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