MTP20P06 Todos los transistores

 ..1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

 9.1. Size:209K  motorola
 mtp20n06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N06V/D Designer's Data Sheet MTP20N06V TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 20 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than

 9.2. Size:120K  motorola
 mtp20n20e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi

 9.3. Size:203K  motorola
 mtp20n20erev2x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi

 9.4. Size:95K  njs
 mtp20n10e.pdf

 9.5. Size:113K  onsemi
 mtp20n15e-d.pdf

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

 9.6. Size:110K  onsemi
 mtp20n15eg.pdf

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

 9.7. Size:283K  cystek
 mtp2071m3.pdf

Spec. No. C417M3 Issued Date 2012.02.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20V ID -5A 52m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.) RDSON@VGS=-2.5V, ID=-2A 80m (typ.) RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr

 9.8. Size:280K  cystek
 mtp2010j3.pdf

Spec. No. C732J3 Issued Date 2011.11.10 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTP2010J3 ID -20A 95m @ VGS=-10V, ID=-10A RDSON(MAX) 105m @ VGS=-4.5V, ID=-10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E