MTP20P06 PDF and Equivalents Search

 

MTP20P06 Specs and Replacement

Type Designator: MTP20P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 20 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-220AB

MTP20P06 substitution

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MTP20P06 datasheet

 9.1. Size:209K  motorola
mtp20n06v.pdf pdf_icon

MTP20P06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N06V/D Designer's Data Sheet MTP20N06V TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 20 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than ... See More ⇒

 9.2. Size:120K  motorola
mtp20n20e.pdf pdf_icon

MTP20P06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi... See More ⇒

 9.3. Size:203K  motorola
mtp20n20erev2x.pdf pdf_icon

MTP20P06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi... See More ⇒

Detailed specifications: MTP1N55, MTP1N60, MTP1N60E, MTP1N80E, MTP1N95, MTP20N10E, MTP20N15EG, MTP20N20E, 20N50, MTP23P06V, MTP23P06VG, MTP25N05E, MTP2955, MTP2955V, MTP2N18, MTP2N20, MTP2N35

Keywords - MTP20P06 MOSFET specs

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