MTP20P06 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N06V/DDesigner's Data SheetMTP20N06VTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-20 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

Spec. No. : C417M3 Issued Date : 2012.02.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20VID -5A52m (typ.)RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.)RDSON@VGS=-2.5V, ID=-2A 80m (typ.)RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr

Spec. No. : C732J3 Issued Date : 2011.11.10 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTP2010J3 ID -20A95m @ VGS=-10V, ID=-10A RDSON(MAX) 105m@ VGS=-4.5V, ID=-10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E