MTP20P06 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N06V/D Designer's Data Sheet MTP20N06V TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 20 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

Spec. No. C417M3 Issued Date 2012.02.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20V ID -5A 52m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.) RDSON@VGS=-2.5V, ID=-2A 80m (typ.) RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr

Spec. No. C732J3 Issued Date 2011.11.10 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTP2010J3 ID -20A 95m @ VGS=-10V, ID=-10A RDSON(MAX) 105m @ VGS=-4.5V, ID=-10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E