MTP23P06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP23P06V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 90 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 23 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 98.3 nS
Conductancia de drenaje-sustrato (Cd): 380 pF
Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET MTP23P06V
MTP23P06V Datasheet (PDF)
mtp23p06v.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP23P06V/DDesigner's Data SheetMTP23P06VTMOS V Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-23 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp23p06v mtp23p06v mtp23p06vg.pdf
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MTP23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power23 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)
mtp23p06vrev1e.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP23P06V/DDesigner's Data SheetMTP23P06VTMOS V Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-23 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp2311m3.pdf
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Spec. No. : C733M3 Issued Date : 2013.09.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60VID -4AMTP2311M3 RDSON@VGS=-10V, ID=-4A 72m(typ.) RDSON@VGS=-4.5V, ID=-3A 98m(typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin
mtp2311v8.pdf
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Spec. No. : C733V8 Issued Date : 2013.06.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTP2311V8 ID -11ARDSON@VGS=10V, ID=-3A 63m(typ)RDSON@VGS=-4.5V, ID=-2A 78m(typ)Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized
mtp2301n3.pdf
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Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res
mtp2311n3.pdf
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Spec. No. : C733N3 Issued Date : 2011.12.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60VMTP2311N3 ID -3.5ARDSON@VGS=-10V, ID=-2A 72m(typ)RDSON@VGS=-4.5V,ID=-1.7A 98m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell
mtp2317n3.pdf
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Spec. No. : C566N3 CYStech Electronics Corp. Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP2317N3 ID -5.8A28m(typ.)RDSON@VGS=-4.5V, ID=-4.5A 35m(typ.)RDSON@VGS=-2.5V, ID=-2.5A 51m(typ.)RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f
mtp2301s3.pdf
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Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2301S3 ID -1.6A75m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m(typ.)RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance
mtp2305n3.pdf
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Spec. No. : C417N3 Issued Date : 2007.07.27 CYStech Electronics Corp. Revised Date : 2018.12.06 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features
mtp2303n3.pdf
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Spec. No. : C426N3 Issued Date : 2008.03.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS
mtp2301n3.pdf
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MTP2301N3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MTP12P06