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MTP23P06V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP23P06V
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38 nC
   trⓘ - Время нарастания: 98.3 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP23P06V

 

 

MTP23P06V Datasheet (PDF)

 ..1. Size:169K  motorola
mtp23p06v.pdf

MTP23P06V
MTP23P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP23P06V/DDesigner's Data SheetMTP23P06VTMOS V Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-23 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 ..2. Size:78K  onsemi
mtp23p06v mtp23p06v mtp23p06vg.pdf

MTP23P06V
MTP23P06V

MTP23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power23 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)

 0.1. Size:192K  motorola
mtp23p06vrev1e.pdf

MTP23P06V
MTP23P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP23P06V/DDesigner's Data SheetMTP23P06VTMOS V Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-23 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.1. Size:290K  cystek
mtp2311m3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C733M3 Issued Date : 2013.09.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60VID -4AMTP2311M3 RDSON@VGS=-10V, ID=-4A 72m(typ.) RDSON@VGS=-4.5V, ID=-3A 98m(typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin

 9.2. Size:324K  cystek
mtp2311v8.pdf

MTP23P06V
MTP23P06V

Spec. No. : C733V8 Issued Date : 2013.06.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTP2311V8 ID -11ARDSON@VGS=10V, ID=-3A 63m(typ)RDSON@VGS=-4.5V, ID=-2A 78m(typ)Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized

 9.3. Size:607K  cystek
mtp2301n3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res

 9.4. Size:307K  cystek
mtp2311n3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C733N3 Issued Date : 2011.12.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60VMTP2311N3 ID -3.5ARDSON@VGS=-10V, ID=-2A 72m(typ)RDSON@VGS=-4.5V,ID=-1.7A 98m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell

 9.5. Size:316K  cystek
mtp2317n3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C566N3 CYStech Electronics Corp. Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP2317N3 ID -5.8A28m(typ.)RDSON@VGS=-4.5V, ID=-4.5A 35m(typ.)RDSON@VGS=-2.5V, ID=-2.5A 51m(typ.)RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f

 9.6. Size:302K  cystek
mtp2301s3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2301S3 ID -1.6A75m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m(typ.)RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance

 9.7. Size:710K  cystek
mtp2305n3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C417N3 Issued Date : 2007.07.27 CYStech Electronics Corp. Revised Date : 2018.12.06 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features

 9.8. Size:702K  cystek
mtp2303n3.pdf

MTP23P06V
MTP23P06V

Spec. No. : C426N3 Issued Date : 2008.03.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS

 9.9. Size:869K  cn vbsemi
mtp2301n3.pdf

MTP23P06V
MTP23P06V

MTP2301N3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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History: ZXMP10A17K | WMB02DN10T1

 

 
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