MTP23P06V - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP23P06V/D Designer's Data Sheet MTP23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 23 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 23 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP23P06V/D Designer's Data Sheet MTP23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 23 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

Spec. No. C733M3 Issued Date 2013.09.18 CYStech Electronics Corp. Revised Date Page No. 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60V ID -4A MTP2311M3 RDSON@VGS=-10V, ID=-4A 72m (typ.) RDSON@VGS=-4.5V, ID=-3A 98m (typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin

Spec. No. C733V8 Issued Date 2013.06.24 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60V MTP2311V8 ID -11A RDSON@VGS=10V, ID=-3A 63m (typ) RDSON@VGS=-4.5V, ID=-2A 78m (typ) Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized

Spec. No. C322N3 CYStech Electronics Corp. Issued Date 2004.04.05 Revised Date 2018.08.31 Page No. 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25 C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res

Spec. No. C733N3 Issued Date 2011.12.27 CYStech Electronics Corp. Revised Date Page No. 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60V MTP2311N3 ID -3.5A RDSON@VGS=-10V, ID=-2A 72m (typ) RDSON@VGS=-4.5V,ID=-1.7A 98m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell

Spec. No. C566N3 CYStech Electronics Corp. Issued Date 2012.04.12 Revised Date 2014.01.14 Page No. 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP2317N3 ID -5.8A 28m (typ.) RDSON@VGS=-4.5V, ID=-4.5A 35m (typ.) RDSON@VGS=-2.5V, ID=-2.5A 51m (typ.) RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f

Spec. No. C322S3 CYStech Electronics Corp. Issued Date 2013.08.29 Revised Date 2013.09.09 Page No. 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301S3 ID -1.6A 75m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m (typ.) RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance

Spec. No. C417N3 Issued Date 2007.07.27 CYStech Electronics Corp. Revised Date 2018.12.06 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25 C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features

Spec. No. C426N3 Issued Date 2008.03.24 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS

JMTP230C04D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 40V, 8A Battery Protection R

MTP2301N3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS